Struct MosfetRoot 

pub struct MosfetRoot {
    pub model: MosfetModel,
    /* private fields */
}

Enhancement-mode MOSFET nonlinear root for WDF trees.

Models the drain-source path as a nonlinear element controlled by an external gate-source voltage Vgs. Uses Newton-Raphson to solve the implicit WDF constraint equation.

Unlike JFETs (depletion-mode, normally on), enhancement MOSFETs are normally off and require Vgs > Vth to conduct.

Fields

model: MosfetModel

Implementations

impl MosfetRoot

pub fn new(model: MosfetModel) -> MosfetRoot

pub fn set_vgs(&mut self, vgs: f64)

Set the gate-source voltage (external control from bias, signal, etc.)

pub fn set_bias(&mut self, vgs_bias: f64)

Set the DC gate-source operating point and current Vgs.

pub fn set_operating_point(&mut self, vgs_bias: f64, vds_bias: f64)

Set the DC operating point used by the incremental WDF one-port.

pub fn vgs_bias(&self) -> f64

DC gate-source operating point.

pub fn vgs(&self) -> f64

Get current gate-source voltage.

pub fn drain_current(&self, vds: f64) -> f64

Compute drain current for given Vds at current Vgs.

See MosfetModel::ids for the enhancement-mode square-law model.

Trait Implementations

impl Clone for MosfetRoot

fn clone(&self) -> MosfetRoot

Returns a duplicate of the value.

fn clone_from(&mut self, source: &Self)

Performs copy-assignment from source.

impl Copy for MosfetRoot

impl Debug for MosfetRoot

fn fmt(&self, f: &mut Formatter<'_>) -> Result<(), Error>

Formats the value using the given formatter.

impl NlDeviceIv for MosfetRoot

fn iv(&self, v: f64) -> (f64, f64)

I(Vds) at current Vgs — drain-source as a 1-port nonlinear element.

Mirrors the JFET/OTA pattern so the MOSFET can participate in multi-NL MNA solves once NlDeviceKind grows a Mosfet variant.

fn v_clamp(&self) -> (f64, f64)

Return (v_min, v_max) voltage clamping bounds for this device.

impl WdfRoot for MosfetRoot

fn process(&mut self, a: f64, rp: f64) -> f64

MOSFET drain-source path: i = Ids(Vds, Vgs)